Équipement de gravure ionique réactive profonde
Titre original de l'avis
Sweden – Industrial machinery – Deep Reaction Ion Etcher (DRIE)
Score d'opportunité
Pourquoi ce score ?
Opportunité
0 / 100
Complexité
0 / 100
Facteurs de risque
Submission deadline in 13 days
Analyse approfondie du portefeuille
Utilise:
- Description
- Industries & Services
- Capabilities
- Market & Experience
- Certifications
Informations clés
- Pouvoir adjudicateur
- Uppsala universitet
- Pays
- Suède
- CPV
- 42000000 - Industrial machinery
- Date limite
- Nov 16, 2026
- Valeur estimée
- SEK 1 (approx. EUR 0)
Analyse IA de l'appel d'offres
Tenderwize prépare une analyse IA de cet appel d'offres à partir de l'avis TED et des documents de consultation : périmètre, exigences clés, critères de sélection, risques et questions à poser à l'acheteur. L'analyse est générée à l'ouverture de l'appel d'offres.
Acheteur
Localisation
Uppsala, SWE
Site web
Profil acheteur
Identifiant
202100-2932
Activité
Education
Lots (1)
LOT-0001
Deep Reaction Ion Etcher (DRIE)
Myfab Uppsala aims at purchasing a Deep Reaction Ion Etcher (DRIE). The purpose of the tool is to transfer patterns defined by e.g., photo- and electron beam lithography covering the pattens size range from all substrate range down to a few nanometres. The system will be used by many operators in a university laboratory environment. It must be easy to use and be insensitive to frequent change of process between batches. The processes include broad range of etching capability: low to high etch rate, wafer dicing, high uniformity, high open area, high aspect ratio, and nanometre scale. The system is intended for etching of silicon as well as other materials compatible with silicon etching, with both photoresist resins and hard masks for patterning.
EUR 0
Valeur estimée
Localisation
Durée
Catégorie
Détails des critères
Myfab Uppsala aims at purchasing a Deep Reaction Ion Etcher (DRIE). The purpose of the tool is to transfer patterns defined by e.g., photo- and electron beam lithography covering the pattens size range from all substrate range down to a few nanometres. The system will be used by many operators in a university laboratory environment. It must be easy to use and be insensitive to frequent change of process between batches. The processes include broad range of etching capability: low to high etch rate, wafer dicing, high uniformity, high open area, high aspect ratio, and nanometre scale. The system is intended for etching of silicon as well as other materials compatible with silicon etching, with both photoresist resins and hard masks for patterning.
Détails de la procédure
- Date de publication
- 02 Nov 2026
- Langues
- English
Métadonnées de référence
- Base juridique
- 32014L0024
Identifiants de référence
- ID de l'appel d'offres
- 763694-2026
Documents (1)
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Score d'opportunité
Pourquoi ce score ?
Opportunité
0 / 100
Complexité
0 / 100
Facteurs de risque
Submission deadline in 13 days
Analyse approfondie du portefeuille
Utilise:
- Description
- Industries & Services
- Capabilities
- Market & Experience
- Certifications