Deep-Reaction-Ionenätzanlage
Originaltitel der Bekanntmachung
Sweden – Industrial machinery – Deep Reaction Ion Etcher (DRIE)
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Submission deadline in 11 days
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Verwendet:
- Description
- Industries & Services
- Capabilities
- Market & Experience
- Certifications
Eckdaten der Ausschreibung
- Öffentlicher Auftraggeber
- Uppsala universitet
- Land
- Schweden
- CPV
- 42000000 - Industrial machinery
- Frist
- Nov 16, 2026
- Geschätzter Wert
- SEK 1 (approx. EUR 0)
KI-Analyse der Ausschreibung
Tenderwize erstellt auf Basis der TED-Bekanntmachung und der Vergabeunterlagen eine KI-Analyse dieser Ausschreibung: Leistungsumfang, zentrale Anforderungen, Eignungskriterien, Risiken und Fragen an den Auftraggeber. Die Analyse wird beim Öffnen der Ausschreibung erstellt.
Auftraggeber
Ort
Uppsala, SWE
Website
Auftraggeberprofil
Kennung
202100-2932
Tätigkeit
Education
Lose (1)
LOT-0001
Deep Reaction Ion Etcher (DRIE)
Myfab Uppsala aims at purchasing a Deep Reaction Ion Etcher (DRIE). The purpose of the tool is to transfer patterns defined by e.g., photo- and electron beam lithography covering the pattens size range from all substrate range down to a few nanometres. The system will be used by many operators in a university laboratory environment. It must be easy to use and be insensitive to frequent change of process between batches. The processes include broad range of etching capability: low to high etch rate, wafer dicing, high uniformity, high open area, high aspect ratio, and nanometre scale. The system is intended for etching of silicon as well as other materials compatible with silicon etching, with both photoresist resins and hard masks for patterning.
EUR 0
Geschätzter Wert
Ort
Dauer
Kategorie
Zuschlagsdetails
Myfab Uppsala aims at purchasing a Deep Reaction Ion Etcher (DRIE). The purpose of the tool is to transfer patterns defined by e.g., photo- and electron beam lithography covering the pattens size range from all substrate range down to a few nanometres. The system will be used by many operators in a university laboratory environment. It must be easy to use and be insensitive to frequent change of process between batches. The processes include broad range of etching capability: low to high etch rate, wafer dicing, high uniformity, high open area, high aspect ratio, and nanometre scale. The system is intended for etching of silicon as well as other materials compatible with silicon etching, with both photoresist resins and hard masks for patterning.
Vergabedetails
- Veröffentlichungsdatum
- 02 Nov 2026
- Sprachen
- English
Referenzmetadaten
- Rechtsgrundlage
- 32014L0024
Referenz-IDs
- Ausschreibungs-ID
- 763694-2026
Dokumente (1)
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Opportunity Score
Warum diese Bewertung?
Chance
0 / 100
Komplexität
0 / 100
Risikofaktoren
Submission deadline in 11 days
Tiefe Portfolioanalyse
Verwendet:
- Description
- Industries & Services
- Capabilities
- Market & Experience
- Certifications